A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.


CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
DSS
I
D
= 1.5 mA 65 V
I
DSS
V
DS
= 32 V V
GS
= 0 V 2.2 µA
I
DSX
V
DS
= 10 V V
GS
= V
GSth
+ 9 V

18 A
I
GSS
V
DS
= 0 V V
GS
= ±15 V 25 nA
V
GS(th)
I
D
= 150 mA V
DS
= 10 V 4.0 5.5 V
R
DS(on)
I
D
= 4.0 A V
GS
= V
GSth
+ 9 V 160 mΩ
g
fs
I
D
= 4.0 A V
DS
= 10 V 4.0 S
C
iss
C
oss
C
rss

V
DS
= 32 V V
GS
= 0 V f = 1.0 MHz
82
40
6.0

pF
G
p

η
D
V
DS
= 32 V P
out
= 150 W f = 860 MHz 13.5
50
14.5

dB
%


UHF POWER LDMOS TRANSISTOR
PACKAGE STYLE .385X.850 4LFG

1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE

DESCRIPTION:
The ASI BLF861A ia a Silicon N-
channel enhancement mode lateral D-
MOS push-pull transistor.

FEATURES:
• Internal input-output matching
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
D
18 A
V
DS
65 V
V
GS
±15 V
P
DISS
318 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
0.55 °C/W
BLF861A