ASIS15-28
器件描述：NPN SILICON RF POWER TRANSISTOR
器件厂商：ASI [Advanced Semiconductor]
文件大小：20.2KB，共1页
Sponsor by e络盟器件资料摘要：
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 200 mA 10 ---
Cob VCB = 30 V f = 1.0 MHz 35 pF
Pout
Pg
h c
VCE = 28 V Pin = 500 mW fo = 30 MHz
15
15
---
---
18
65
---
W
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI S15-28
DESCRIPTION:
The ASI S15-28 is Designed for
Class AB or C, Common Emitter
Linear HF Communications
Applications.
FEATURES INCLUDE:
• High Power Gain •
Emitter Ballasting
MAXIMUM RATINGS
IC 3.0 A
VCB 65 V
PDISS 30 W @ TC = 25 OC
TJ -55 OC to +200 OC
TSTG -55 OC to +200 OC
qJC 5.8 OC/W
PACKAGE STYLE .380" 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 200 mA 10 ---
Cob VCB = 30 V f = 1.0 MHz 35 pF
Pout
Pg
h c
VCE = 28 V Pin = 500 mW fo = 30 MHz
15
15
---
---
18
65
---
W
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI S15-28
DESCRIPTION:
The ASI S15-28 is Designed for
Class AB or C, Common Emitter
Linear HF Communications
Applications.
FEATURES INCLUDE:
• High Power Gain •
Emitter Ballasting
MAXIMUM RATINGS
IC 3.0 A
VCB 65 V
PDISS 30 W @ TC = 25 OC
TJ -55 OC to +200 OC
TSTG -55 OC to +200 OC
qJC 5.8 OC/W
PACKAGE STYLE .380" 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER