PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 100 at I
C
= 350 mA
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-100 V
Collector-Emitter Voltage V
CEO
-80 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
= 25 C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100 V I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-80 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V I
E
=-1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1 µA V
CB
=-80V, I
E
=0
Emitter Cut-Off Current I
EBO
-10 µA V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35 V I
C
=-350mA, I
B
=-35mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0 V IC=-350mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
100
100 300
I
C
=-10mA, V
CE
=-2V*
I
C
=-350mA, V
CE
=-2V*
Transition
Frequency
f
T
50 500 MHz I
C
=-200mA, V
CE
=-5V
f=20MHz
Collector-Base
Capacitance
C
CB
20 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6732
3-11
C
B
E