A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 1.0 mA 16 V
BV
CBO
I
C
= 100 µA 25 V
BV
EBO
I
E
= 100 µA 1.5 V
I
CBO
V
CB
= 15 V 1.0 µA
I
EBO
V
EB
= 1.0 V 4.0 µA
h
FE
V
CE
= 8.0 V I
C
= 200 mA 20 200 ---

C
OB
V
CB
= 10 V f = 1.0 MHz 2.9 4.0 pF

S21
2
V
CC
= 8.0 V I
C
= 200 mA f = 1.0 GHz 3.5 dB
P
OSC
V
CE
= 12 V I
C
= 200 mA f = 7.5 GHz 630 mW

NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC2951
DESCRIPTION:
The ASI 2SC2951 is a High
Frequency Transistor Designed for
General Purpose Oscillator
Applications up to 10 GHz.

FEATURES:

• P
OSC
= 630 mW Typical at 7.5 GHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I
C
440 mA
V
CE
16 V
V
CB
25 V
P
DISS
9.7 W @ T
C
= 25 °C
T
J
-65 to +200 °C
T
STG
-65 to +200 °C
θ
JC
18 °C/W
PACKAGE STYLE .200 2L FLG