Transistors
1
Publication date: November 2002 SJC00006BED
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
■ Features
• High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−250 V
Collector-emitter voltage (Base open) V
CEO
−200 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−70 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −200 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −1 µA, I
C
= 0 −5V
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −5 mA 60 220 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −50 mA, I
B
= −5 mA −1.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 50 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 5 10 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
Rank Q R
h
FE
60 to 150 100 to 220
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Note) The part number in the parenthesis shows conventional part number.