©

1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3307
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14129EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark a35 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3307 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 4650 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Drain Current (DC) ID(DC) ±70 A
Drain Current (pulse)
Note1
ID(pulse) ±280 A
Total Power Dissipation (TC = 25°C) PT1 120 W
Total Power Dissipation (TA = 25°C) PT2 3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 45 A
Single Avalanche Energy
Note2
EAS 202 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 1.04 °C/W
Channel to Ambient Rth(ch-A) 41.7 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3307 TO-3P
(TO-3P)