2SK3116
器件资料摘要：
©
1998
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark a35 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)
•Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) ID(DC) ±7.5 A
Drain Current (pulse)
Note1
ID(pulse) ±30 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 70 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 7.5 A
Single Avalanche Energy
Note2
EAS 37.5 mJ
Diode Recovery dv/dt
Note3
dv/dt 3.5 V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V
3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3116 TO-220AB
2SK3116-S TO-262
2SK3116-ZJ TO-263
1998
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark a35 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)
•Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) ID(DC) ±7.5 A
Drain Current (pulse)
Note1
ID(pulse) ±30 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 70 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 7.5 A
Single Avalanche Energy
Note2
EAS 37.5 mJ
Diode Recovery dv/dt
Note3
dv/dt 3.5 V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V
3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3116 TO-220AB
2SK3116-S TO-262
2SK3116-ZJ TO-263