Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC – DC
converter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage V
DSS
450 V
———————————————————————————————————————————
Gate to source voltage V
GSS
±30 V
———————————————————————————————————————————
Drain current I
D
8A
———————————————————————————————————————————
Drain peak current I
D(pulse)
*32 A
———————————————————————————————————————————
Body–drain diode reverse drain current I
DR
8A
———————————————————————————————————————————
Channel dissipation Pch** 35 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
1
2
3
1
2
3
TO–220CFM
1. Gate
2. Drain
3. Source
2SK2424
Silicon N Channel MOS FET