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©

2000
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No. D14646EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)
RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)
• Low Ciss: Ciss = 3300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VGS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m36 A
Drain Current (pulse)
Note1
ID(pulse) m120 A
Total Power Dissipation (TC = 25°C) PT 65 W
Total Power Dissipation

(TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS –35 A
Single Avalanche Energy
Note2
EAS 123 mJ
Notes1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V a161 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ601 TO-251
2SJ601-Z TO-252
(TO-251)
(TO-252)