1
Power Transistors
2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
n
Features
l High breakdown voltage, and high reliability through the use of a
glass passivation layer
l High-speed switching
l Wide area of safe operation (ASO)
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to
base voltage
Collector to
base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1600
1500
1600
600
5
30
20
10
120
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
2SC5294
2SC5294A
2SC5294
2SC5294A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V
I
C
= 12A, I
B1
= 2.4A, I
B2
= –4.8A
min
5
typ
3
1.5
0.12
max
50
50
1
1
50
12
3
1.5
2.5
0.2
Unit
m A
mA
m A
V
V
MHz
m s
m s
2SC5294
2SC5294A
2SC5294
2SC5294A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5– 0.5
26.5
–
0.5
22.0
–
0.5
23.4
18.6
–
0.5
3.3
–
0.3
5.5
–
0.3
2.0
0.7
–
0.1
2.0
2
.0
1.2
10.0
3.0– 0.3
f 3.2– 0.1
4.5
5.45– 0.3
123
5.45– 0.3
1.1– 0.1
2.0– 0.2
4.0
5° 5°
5°
5°
5°
5°
0.7– 0.1