EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2SC5120

器件描述:High frequency amplifier
器件厂商:HITACHI [Hitachi Semiconductor]
文件大小:26.37KB,共5页
Sponsor by e络盟
器件资料摘要:
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
f
T
= 500 MHz typ
• High voltage and low output capacitance
V
CEO
= 150 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Collector to base voltage V
CBO
150 V
———————————————————————————————————————————
Collector to emitter voltage V
CEO
150 V
———————————————————————————————————————————
Emitter to base voltage V
EBO
3V
———————————————————————————————————————————
Collector current I
C
0.2 A
———————————————————————————————————————————
Collector peak current ic(peak) 0.4 A
———————————————————————————————————————————
Collector power dissipation P
C
1.4 W
—————
8*
1
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
Note: 1. Tc = 25°C
TO–126FM
1. Emitter
2. Collector
3. Base
1
2
3
2SC5120
Silicon NPN Epitaxial