UTC 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
1

QW-R211-008,A

AUDIO POWER AMPLIFIER

FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SA928A

TO-92NL
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1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCEO
Emitter-base voltage VEBO 5 V
Collector dissipation Pc 1 W
Collector current Ic 2 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BVCBO Ic=100µA,IE=0 30 V
Collector-emitter breakdown voltage BVCEO Ic=10mA,IB=0 30 V
Emitter-base breakdown voltage BVEBO IE=1mA,Ic=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 100 nA
Emitter cut-off current IEBO BE=5V,Ic=0 100 nA
DC current gain(note) hFE VCE=2V,Ic=500mA 100 320
Base-emitter on voltage VBE(on) VCE=2V,Ic=500mA 1 V
Collector-emitter saturation voltage VCE(sat) Ic=1.5A,IB=0.03A 2 V
Output capacitace Cob VCB =10V, IE =0,f=1MHz 30 pF
Current gain bandwidth product fT VCE=2V,Ic=500mA 120 MHz

CLASSIFICATION OF hFE
RANK Y
RANGE 100-200 160-320