Application
High frequency amplifier
Features
• Excellent high frequency characteristics
f
T
= 1000 MHz typ
• High breakdown voltage and low output
capacitance
V
CEO
= 100 V, Cob = 4.5 pF typ
• Suitable for wide band video amplifier
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
———————————————————————————————————————————
Collector to base voltage V
CBO
100 V
———————————————————————————————————————————
Collector to emitter voltage V
CEO
100 V
———————————————————————————————————————————
Emitter to base voltage V
EBO
5V
———————————————————————————————————————————
Collector current I
C
0.2 A
———————————————————————————————————————————
Collector peak current ic(peak) 0.5 A
———————————————————————————————————————————
Collector power dissipation P
C
1.25 W
———————————————————————————————————————————
Collector power dissipation P
C
*1
8W
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
Note: 1. Value at T
C
= 25°C.
1
2
3 1. Emitter
2. Collector
3. Base
TO–126FM
2SC5023
Silicon NPN Epitaxial