©

2001
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D15616EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
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DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC(DC) 100 mA
Collector Current (pulse)
Note1
IC(pulse) 200 mA
Total Power Dissipation (TA = 25°C)
Note2
PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm
2
x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60 V, IE = 0 100 nA
Emitter Cut-off Current IEBO VEB = 5.0 V, IC = 0 100 nA
DC Current Gain
Note
hFE1 VCE = 6.0 V, IC = 0.1 mA 50 −
hFE2 VCE = 6.0 V, IC = 1.0 mA 90 200 600 −
Base to Emitter Voltage
Note
VBE VCE = 6.0 V, IC = 1.0 mA 0.62 V
Collector Saturation Voltage
Note
VCE(sat) IC = 100 mA, IB = 10 mA 0.15 0.3 V
Base Saturation Voltage
Note
VBE(sat) IC = 100 mA, IB = 10 mA 0.86 1.0 V
Gain Bandwidth Product fT VCE = 6.0 V, IE = −10 mA 150 250 MHz
Output Capacitance Cob VCE = 6.0 V, IE = 0, f = 1.0 MHz 3.0 4.0 pF
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSFICATION
MarkingL4L5L6L7
hFE2 90 to 180 135 to 270 200 to 400 300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6 ± 0.1 0.8 ± 0.1
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05