Feature
• High speed switching
t
f
= 0.2 µs typ
• High breakdown voltage
V
CBO
= 1500 V
• Isolated package; TO-3PFM
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
————————————————————–
Collector to base voltage V
CBO
1500 V
————————————————————–
Collector to emitter voltage V
CEO
800 V
————————————————————–
Emitter to base voltage V
EBO
6V
————————————————————–
Collector current I
C
6A
————————————————————–
Collector peak current i
C(peak)
7A
————————————————————–
Collector surge current i
C(surge)
16 A
————————————————————–
Collector power dissipation P
C
*1
50 W
————————————————————–
Junction temperature Tj 150 °C
————————————————————–
Storage temperature Tstg –55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
1
2
3
TO-3PFM
1. Base
2. Collector
3. Emitter
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test condition
———————————————————————————————————————————
Collector to emitter breakdown voltage V
(BR)CEO
800 — — V I
C
= 10 mA, R
BE
= ∞
———————————————————————————————————————————
Emitter to base breakdown voltage V
(BR)EBO
6 ——V I
E
= 10 mA, I
C
= 0
———————————————————————————————————————————
Collector cutoff current I
CES
— — 500 µA V
CE
= 1500 V, R
BE
= 0
———————————————————————————————————————————
DC current transfer ratio h
FE
7 — 30 V
CE
= 5 V, I
C
= 1 A
———————————————————————————————————————————
Collector to emitter saturation voltage V
CE(sat)
——5 V I
C
= 5 A, I
B
= 1 A
———————————————————————————————————————————
Base to emitter saturation voltage V
BE(sat)
— — 1.5 V I
C
= 5 A, I
B
= 1 A
———————————————————————————————————————————
2SC4745
Silicon NPN Triple Diffused
Character Display Horizontal Deflection Output