Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
————————————————————–
Collector to base voltage V
CBO
30 V
————————————————————–
Collector to emitter voltage V
CEO
20 V
————————————————————–
Emitter to base voltage V
EBO
3V
————————————————————–
Collector current I
C
300 mA
————————————————————–
Collector peak current i
C(peak)
500 mA
————————————————————–
Collector power dissipation P
C
1W
——–———–
P
C
*1
5
————————————————————–
Junction temperature Tj 150 °C
————————————————————–
Storage temperature Tstg –55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
1
2
3
TO-126 MOD
1. Emitter
2. Collector
3. Base
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test condition
———————————————————————————————————————————
Collector to base breakdown voltage V
(BR)CBO
30——V I
C
= 100 µA, I
E
= 0
———————————————————————————————————————————
Collector to emitter breakdown voltage V
(BR)CEO
20——V I
C
= 1 mA, R
BE
= ∞
———————————————————————————————————————————
Collector cutoff current I
CBO
— — 1.0 µA V
CB
= 25 V, I
E
= 0
———————————————————————————————————————————
Emitter cutoff Current I
EBO
— — 10 µA V
EB
= 3 V, I
C
= 0
———————————————————————————————————————————
DC current transfer ratio h
FE
50 — 200 V
CE
= 5 V, I
C
= 50 mA
———————————————————————————————————————————
Collector to emitter saturation voltage V
CE(sat)
— — 1.0 V I
C
= 100 mA, I
B
= 10 mA
———————————————————————————————————————————
Gain bandwidth product f
T
1.5 2.2 — GHz V
CE
= 5 V, I
C
= 50 mA
———————————————————————————————————————————
Collector output capacitance Cob — 4.7 — pF V
CB
= 10 V, I
E
= 0, f = 1 MHz
———————————————————————————————————————————
2SC4529
Silicon NPN Epitaxial
VHF Wide Band Amplifier