1
Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Satisfactory linearity of foward current transfer ratio h
FE
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
700
7
22
10
3.5
150
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 750V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 2.5A
I
C
= 7A, I
B
= 2.5A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 6A, L
leak
= 5m H,
I
B1
= 1.7A, I
B2
= –1.7A
min
7
5
3
typ
2
max
10
1
8
5
1.5
12
0.6
Unit
m A
mA
V
V
V
MHz
m s
m s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0– 0.5
6.0
10.0
26.0
–
0.5
20.0
–
0.5
1.5
2.5
Solder Dip
10.9– 0.5
123
2.0– 0.3
3.0– 0.3
1.0– 0.2
5.0– 0.3
3.0
4.0
2.0
5.45– 0.3
0.6– 0.2
1.5
2.7– 0.3
1.5
2.0
f 3.3– 0.2
3.0