1
Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
n
Features
l High transition frequency f
T
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
50
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Base time constant
Symbol
V
CBO
V
EBO
h
FE
V
BE
V
CE(sat)
C
re
f
T
*
PG
r
bb
' · C
C
Conditions
I
C
=100m A, I
E
= 0
I
E
= 10m A, I
C
= 0
V
CB
= 10V, I
E
= –2mA
V
CB
= 10V, I
E
= –2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –15mA, f = 100MHz
V
CB
= 10V, I
E
= –1mA, f = 100MHz
V
CB
= 10V, I
E
= –10mA, f = 450kHz
min
30
3
25
600
typ
0.72
0.1
1
1200
20
max
1.5
1600
25
Unit
V
V
V
V
pF
MHz
dB
ps
*
f
T
Rank classification
Rank T S
f
T
(MHz) 600 ~ 1300 900 ~ 1600