Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage V
DSS
60 V
———————————————————————————————————————————
Gate to source voltage V
GSS
±20 V
———————————————————————————————————————————
Drain current I
D
25 A
———————————————————————————————————————————
Drain peak current I
D(pulse)
* 100 A
———————————————————————————————————————————
Body to drain diode reverse drain current I
DR
25 A
———————————————————————————————————————————
Channel dissipation Pch** 50 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T
C
= 25 °C
2SK1622 L , 2SK1622 S
Silicon N-Channel MOS FET
1
2
3
2, 4
1
3
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
S type L type
LDPAK