1
Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
n
Features
l Incorporating a built-in damper diode
l Reduction of a parts count and simplification of a circuit are al-
lowed
l High breakdown voltage with high reliability
l High-speed switching
l Wide area of safe operation (ASO)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
7
20
5
4
100
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 10V, I
C
= 5A
I
C
= 5A, I
B
= 1.2A
I
C
= 5A, I
B
= 1.2A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 5A, I
B1
= 1.2A, I
B2
= –1.2A,
L
leak
= 5m H
I
C
= –6A, I
B
= 0
min
7
4.5
typ
2
max
30
300
15
8
1.5
12
0.8
–2.3
Unit
m A
m A
V
V
V
MHz
m s
m s
V
T
C
=25 C
Ta=25 C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
15.0– 0.3 5.0– 0.2
3.2
11.0– 0.2
10.9– 0.5
5.45– 0.3
2.0– 0.2
1.1– 0.1
f 3.2– 0.1
16.2
–
0.5
21.0
–
0.5
15.0
–
0.2
0.7
2.3
3.2
0.6– 0.2
2.0– 0.1
Solder Dip
1 23
C
B
E