2SD1666
器件描述：LOW FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：30.59KB，共4页
Sponsor by e络盟器件资料摘要：
2SB1133 / 2SD1666
No.3031-1/4
Features
• Wide ASO(Adoption of MBIT process).
•
Micaless package facilitating easy mounting.
• High reliability.
Specifications
( ) : 2SB1133
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(−)60 V
Collector-to-Emitter Voltage V
CEO
(−)60 V
Emitter-to-Base Voltage V
EBO
(−)6 V
Collector Current I
C
(−)3 A
Collector Current (Pulse) I
CP
(−)8 A
Collector Dissipation PC
2W
Tc=25°C25W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −40 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
Collector Cutoff Current I
CBO
V
CB
=(--)40V, I
E
=0 (--)100 µA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0 (--)100 µA
DC Current Gain
h
FE
(1) V
CE
=(--)5V, I
C
=(--)0.5A *70 *280
h
FE
(2) V
CE
=(--)5V, I
C
=(--)3A 20
Continued on next page.
* : The 2SB1133 / 2SD1666 are classified by 0.5A h
FE
as follows :
Rank Q R S
h
FE
70 to 140 100 to 200 140 to 280
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3031A
2SB1133 / 2SD1666
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2041A
[2SB1133 / 2SD1666]
72501 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.552.55
2.4
4.5
2.8
0.7
2.552.55
2.4
1 23
PNP / NPN Triple Diffused Planar Silicon Transistors
No.3031-1/4
Features
• Wide ASO(Adoption of MBIT process).
•
Micaless package facilitating easy mounting.
• High reliability.
Specifications
( ) : 2SB1133
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(−)60 V
Collector-to-Emitter Voltage V
CEO
(−)60 V
Emitter-to-Base Voltage V
EBO
(−)6 V
Collector Current I
C
(−)3 A
Collector Current (Pulse) I
CP
(−)8 A
Collector Dissipation PC
2W
Tc=25°C25W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −40 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
Collector Cutoff Current I
CBO
V
CB
=(--)40V, I
E
=0 (--)100 µA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0 (--)100 µA
DC Current Gain
h
FE
(1) V
CE
=(--)5V, I
C
=(--)0.5A *70 *280
h
FE
(2) V
CE
=(--)5V, I
C
=(--)3A 20
Continued on next page.
* : The 2SB1133 / 2SD1666 are classified by 0.5A h
FE
as follows :
Rank Q R S
h
FE
70 to 140 100 to 200 140 to 280
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3031A
2SB1133 / 2SD1666
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2041A
[2SB1133 / 2SD1666]
72501 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.552.55
2.4
4.5
2.8
0.7
2.552.55
2.4
1 23
PNP / NPN Triple Diffused Planar Silicon Transistors