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©

2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
• Compact package
• High forward transfer admittance
| yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
• Low capacitance
Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
• Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK660 SST
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note
VDSX 20 V
Gate to Drain Voltage VGDO –20 V
Drain Current ID 10 mA
Gate Current IG 10 mA
Total Power Dissipation PT 100 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg –55 to +125 °C
Note VGS = –1.0 V
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
EQUIVALENT CIRCUIT
Source
Gate
Drain