Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
1
2, 4
3
LDPAK
3
2
1
4
3
2
1
4
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage V
DSS
–60 V
———————————————————————————————————————————
Gate to source voltage V
GSS
±20 V
———————————————————————————————————————————
Drain current I
D
–30 A
———————————————————————————————————————————
Drain peak current I
D(pulse)
* –120 A
———————————————————————————————————————————
Body–drain diode reverse drain current I
DR
–30 A
———————————————————————————————————————————
Avalanche current I
AP
*** –30 A
———————————————————————————————————————————
Avalanche energy E
AR
*** 77 mJ
———————————————————————————————————————————
Channel dissipation Pch** 75 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET