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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BLX13C

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:14.08KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 10 mA 65 V
BV
CEO
I
C
= 50 mA 36 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
CB
= 36 V 4.0 mA
h
FE
V
CE
= 5.0 V I
C
= 1.25A 10 100 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 50 pF
P
G
η

V
CE
= 28 V P
OUT
= 25 W f = 28 MHz



21

45

dB
%

NPN SILICON RF POWER TRANSISTOR
BLX13C
DESCRIPTION:
The ASI BLX13C is Designed for
28 V, Linear Amplifier, class A and AB in
the HF and VHF bands.

FEATURES:
• P
G
= 21 dB Typical at 25 W/ 28 MHz

• Omnigoldl™ Metallization System
MAXIMUM RATINGS
I
C
3.0 A
V
CE
36 V
V
CB
65 V
P
DISS
73 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.39 °C/W

PACKAGE STYLE .380" 4L STUD


MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H .090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E E
C
B