BFC61
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
1 2 3
16
.
5
1 (
0
.
6
5
0
)
14
.
2
2 (
0
.
5
6
0
)
3.05 (0.120)
2.54 (1.000)
10.67 (0.420)
9.65 (0.380)
5.33 (0.210)
4.83 (0.190)
6
.
86
(
0
.
2
70
)
5
.
84
(
0
.
2
30
)
4.83 (0.190)
3.56 (0.140)
1.40 (0.020)
0.51 (0.055)
3.73 (0.147)
3.53 (0.139)
Dia.
1.78 (0.070)
0.99 (0.390)
6.
35
(
0
.
250
)
4.
60
(
0
.
181
)
14
.
73 (
0
.
5
80)
12
.
70 (
0
.
5
00)
1.02 (0.040)
0.38 (0.015)
2.54 (0.100)
Nom.
5.08 (0.200)
Nom.
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
2
TO220–AC Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
V
GS
= 0V , I
D
= 250µA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
3.6
14.4
±30
125
–55 to 150
300
V
A
A
V
W
°C
Drain – Source Breakdown Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
1000
3.6
4.00
250
1000
±100
24
V
A
Ω
µA
nA
V
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
V
DSS
1000V
I
D(cont)
3.6A
R
DS(on)
4.00Ω
4TH GENERATION MOSFET
Pin 1 — Gate Pin 2 — Drain Pin 3 — Source