5LP01M
器件描述：ULTRAHIGH-SPEED SWITCHING APPLICATIONS
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：41.44KB，共4页
Sponsor by e络盟器件资料摘要：
31000TS (KOTO) TA-2040 No.6135-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6135
5LP01M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.3
0.65 0.65
2.0
0.425
1.250
2.1
0.425
0.15
0 to 0.1
0.2
0.3 0.6
0.9
12
3
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2158
[5LP01M]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
1 : Gate
2 : Source
3 : Drain
SANYO : MCP3
˚C
˚C
Marking : XB Continued on next page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
05–V
egatloVecruoS-ot-etaGV
SSG
01±V
)CD(tnerruCniarDI
D
70.0–A
)eslup(tnerruCniar
PD
WP £ elcycytud,sµ01 £ %182.0–A
noitapissiDrewoPelbawollAP
D
51.0W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB(
I
D
V,Am1–=
SG
0=05–V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V05–=
SG
0 1–Aµ
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,V8±=
SD
0 1±Aµ
egatloVffotuCV
SG
)ffo(V
SD
I,V01–=
D
Aµ001–=4.0–4.1–V
ecnattimdArefsnarTdrawroF|sfy|V
SD
I,V01–=
D
Am04– 7001Sm
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SD
1)no(I
D
V,Am04–=
SG
V4–=8132 W
R
SD
2)no(I
D
V,Am02–=
SG
V5.2–=0282 W
R
SD
3)no(I
D
V,Am5–=
SG
V5.1– 306 W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6135
5LP01M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.3
0.65 0.65
2.0
0.425
1.250
2.1
0.425
0.15
0 to 0.1
0.2
0.3 0.6
0.9
12
3
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2158
[5LP01M]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
1 : Gate
2 : Source
3 : Drain
SANYO : MCP3
˚C
˚C
Marking : XB Continued on next page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD
05–V
egatloVecruoS-ot-etaGV
SSG
01±V
)CD(tnerruCniarDI
D
70.0–A
)eslup(tnerruCniar
PD
WP £ elcycytud,sµ01 £ %182.0–A
noitapissiDrewoPelbawollAP
D
51.0W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB(
I
D
V,Am1–=
SG
0=05–V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V05–=
SG
0 1–Aµ
tnerruCegakaeLecruoS-ot-etaGI
SSG
V
SG
V,V8±=
SD
0 1±Aµ
egatloVffotuCV
SG
)ffo(V
SD
I,V01–=
D
Aµ001–=4.0–4.1–V
ecnattimdArefsnarTdrawroF|sfy|V
SD
I,V01–=
D
Am04– 7001Sm
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SD
1)no(I
D
V,Am04–=
SG
V4–=8132 W
R
SD
2)no(I
D
V,Am02–=
SG
V5.2–=0282 W
R
SD
3)no(I
D
V,Am5–=
SG
V5.1– 306 W