Transistors
1
2SA2046
Silicon PNP epitaxial planer type
For DC-DC converter
a73 Features
• Low collector to emitter saturation voltage V
CE(sat)
• Mini3-G1 type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−30 V
Collector to emitter voltage V
CEO
−20 V
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−5A
Collector current I
C
−1.5 A
Collector power dissipation
*
P
C
400 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −30 V
Collector to emitter voltage V
CEO
I
C
= −1 mA, I
B
= 0 −20 V
Emitter to base voltage V
EBO
I
E
= −10 µA, , I
C
= 0 −5V
Forward current transfer ratio
*
h
FE
V
CE
= −2 V, I
C
= −100 mA 160 560
Collector to emitter saturation voltage
*
V
CE(sat)
I
C
= −500 mA, I
B
= −25 mA −50 −150 mV
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 25 35 pF
Transition frequency f
T
V
CB
= −10 V, I
E
= 20 mA 170 MHz
f = 200 MHz
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 3Z
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Type Package
Note)
*
: Measure on the ceramic substrate at 15 × 15 × 0.6 mm
3
0.40
+0.10
−0.05
1.45
0.65
±0.15
0.65
±0.15
1.50
+0.25 −
0.05
2.80
+0.20 −
0.30
21
3
0.95 0.95
1.90±0.20
2.90
+0.20
−0.05
0.16
+0.10
−0.06
0.40
±0.20
5
°
10°
0
∼
0.1
1.10
+0.20 −
0.10
1.10
+0.30 −
0.10
Note)
*
: Pulse measurement