A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C
= 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 18 V
BV
CES
I
C
= 100 mA 36 V
BV
EBO
I
E
= 5.0 mA 4.0 V
I
CBO
V
CB
= 15 V 5.0 mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A 10 ---
C
OB
V
CB
= 12.5 V f = 1.0 MHz 430 pF
P
G
η
C
V
CE
= 12.5 V P
OUT
= 150 W f = 175 MHz
5.0 5.5
60
dB
%


NPN SILICON RF POWER TRANSISTOR
SD1441
DESCRIPTION:
The ASI SD1441 is a12.5 V epitaxial silicon
NPN plannar transistor. Designed primarily for
VHF communication in the 175 MHz frequency.

FEATURES:
• 175 MHz 12.5 V
• P
G
= 5.0 dB at 150 W/175 MHz
• Omnigold™ Metalization System
• Common Emitter configuration
MAXIMUM RATINGS
I
C
22 A
V
CBO
36 V
V
CEO
18 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
350 W @ T
C
= 25 °C
T
J
-65 °C to +200 °

C
T
STG
-65 °C to +150 °C
θ
JC
0.5 °C/W
PACKAGE STYLE .500 6L FLG
































1 = Collecttor 2 = Base 3&4 = Emitter
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm

.725 / 18.42
H
DIM
K
L
I
J .970 / 24.64 .980 / 24.89
.170 / 4.32
N
M
.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81

.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
1
2
3
4