A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 100 mA 40 V
BV
CEO
I
C
= 100 mA 20 V
BV
EBO
I
E
= 5.0 mA 4.0 V
I
CES
V
CE
= 12.5 V 10 mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A 20 ---
C
OB
V
CB
= 12.5 V f = 1.0 MHz 300 350 pF
G
PE
IMD
η
C

V
CC
= 12.5 V I
C
= 4.7 A P
OUT
= 40 W(PEP)
f = 30 MHz
12

40
15
-35
45

-30
dB
dB
%

NPN SILICON RF POWER TRANSISTOR
MRF460
DESCRIPTION:
The ASI MRF460 is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
• Omnigold™ Metalization System
• P
G
= 12 dB Min. @ 30 MHz & 40 W
• Efficiency 40%
MAXIMUM RATINGS
I
C
215 A
V
CBO
40 V
V
CEO
20 V
V
EBO
4.0 V
P
DISS
175 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.0 °C/W
PACKAGE STYLE .500" 4L FLANGE



1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER