A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change witout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 35 V
BV
CES
I
C
= 10 mA 65 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
CE
= 36 V 4.0 mA
h
FE
V
CE
= 5.0 V I
C
= 1.25 A 10 100 ---
C
OB
V
CB
= 28 V f = 1.0 MHz 45 pF
G
P
f
T
V
CE
= 28 V f = 175 MHz
V
CB
= 28 V I
E
= 200 mA f = 100 MHz
9.0
625
---
dB
MHz
NPN SILICON RF POWER TRANSISTOR
BLY93C
DESCRIPTION:
The ASI BLY93C is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
FEATURES:
• Common Emitter
• P
G
= 9.0 dB at 25 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
3.0 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
70 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.5 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H .160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J .240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
B E
E C