ASI2N5945
器件描述:NPN SILICON RF POWER TRANSISTOR
文件大小:13.83KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 16 V
BV
CES
I
C
= 100 mA 36 V
BV
EBO
I
E
= 2.0 mA 4.0 V
I
CBO
V
CB
= 15 V 1.0 mA
h
FE
V
CE
= 5.0 V I
C
= 200 mA 20 --- --- ---
C
ob
V
CB
= 12.5 V f = 1.0 MHz --- 18 25 pF
P
G
η
c
V
CC
= 12.5 V P
OUT
= 4.0 W f = 470 MHz 9.0
60
10 dB
%
NPN SILICON RF POWER TRANSISTOR
2N5945
DESCRIPTION:
The ASI 2N5945 is Designed for
FM Land Mobile Applications in the
400 to 960 MHz.
FEATURES:
• Common Emitter
• P
G
= 9.0 dB at 2.0 W/470 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
0.8 A
V
CBO
36 V
V
CEO
16 V
V
EBO
4.0 V
P
DISS
15 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
11.6 °C/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H .245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J .217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
C
B
E
E