A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 200 mA 35 V
BV
CES
I
C
= 200 mA 65 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CBO
V
CB
= 30 V 1.0 mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA 5.0 --- ---
C
OB
V
CB
= 30 V f = 1.0 MHz 45 65 pF
G
P

η
C

V
CE
= 28 V P
OUT
= 40 W f = 175 MHz
V
CE
= 10 V I
C
= 200 mA f = 100 MHz
7.6

8.1
60
---
dB
%

NPN SILICON RF POWER TRANSISTOR
2N5643
DESCRIPTION:
The ASI 2N5643 is Designed for
wideband large-signal amplifier stages
in the 125 – 175 MHz range.

FEATURES:
• Minimum Gain = 7.6 dB
• Output Power = 40 W
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
5.0 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
60 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
2.9 °C/W
PACKAGE STYLE .380 4L STUD



















MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H .090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E E
C
B