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BFP26

器件描述:PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:194.51KB,共4页
Sponsor by e络盟
器件资料摘要:

PNP Silicon Transistors BFP 23
with High Reverse Voltage BFP 26
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BFP 23
BFP 26
Q62702-F622
Q62702-F722
– TO-92
1 2 3
E B C
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm · 25 mm · 0.5 mm.
Parameter Symbol
BFP 23
Unit
Collector-emitter voltage VCE0 200 V
Collector-base voltage VCB0 200
Emitter-base voltage VEB0
Collector current IC mA
Base current IB
Total power dissipation, TC = 66 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA £ 200 K/W
Peak collector current ICM
Peak base current IBM
BFP 26
300
300
200
100
625
150
500
200
Values
6
Junction - case
2)
Rth JC £ 135
l High breakdown voltage
l Low collector-emitter saturation voltage
l Low capacitance
l Complementary types: BFP 22, BFP 25 (NPN)
1
2
3