2SC3359S
Transistors
Rev.A 1/2
Power Transistor (80V, 0.3A)
2SC3359S


zFeatures
1) High breakdown voltage, BV
CEO
=80V
2) Low saturation voltage, typically V
CE(sat)
= 0.2V at I
B
=0.3A / 0.03A


zElectrical characteristics (Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
80
80
5
0.3
0.3
150
−55 to +150
Unit
V
V
V
A
W
C
C
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zAbsolute maximum ratings (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
80
80
5
−
−
−
50
−
−
−
−
−
−
0.2
150
5
−
−
−
0.5
0.5
0.5
−
8
V
V
V
V
MHz
pF
I
C
=50µA
V
CB
=80V
V
EB
=4V
V
C
/I
CB
=0.3V/0.03A
V
CE
=5V , I
E
= −0.01A , f=100MHz
V
CB
=10V , I
E
=0A , f=1MHz
I
C
=1mA
I
E
=50µA
A
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter outoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage VCE(sat)
120 − 390 − V
CE
=3V, I
C
=0.1A
A



zPackaging specification and h
FE
Type
Package
h
FE
Code
Basic orderin unit (pieces)
2SC3359S
SPT
QR
TP
5000