1
Power Transistors
Publication date: March 2003 SJD00071BED
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD2136
■ Features
• High forward current transfer ratio h
FE
which has satisfactory
linearity
• Low collector-emitter saturation voltage V
CE(sat)
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−60 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−3A
Peak collector current I
CP
−5A
Collector power dissipation P
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank P Q R
h
FE1
40 to 90 70 to 150 120 to 250
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −30 mA, I
B
= 0 −60 V
Base-emitter voltage V
BE
V
CE
= −4 V, I
C
= −3 A −1.8 V
Collector-emitter cutoff current (E-B short) I
CES
V
CE
= −60 V, V
BE
= 0 −200 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −30 V, I
B
= 0 −300 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −1mA
Forward current transfer ratio h
FE1

*
V
CE
= −4 V, I
C
= −1 A 40 250 
h
FE2
V
CE
= −4 V, I
C
= −3 A 10
Collector-emitter saturation voltage V
CE(sat)
I
C
= −3 A, I
B
= − 0.375A −1.2 V
Transition frequency f
T
V
CB
= −5 V, I
E
= 0.1 A, f = 200 MHz 270 MHz
Turn-on time t
on I
C
= −1 A, I
B1
= − 0.1 A, I
B2
= 0.1 A
0.5 µs
Storage time t
stg
1.2 µs
Fall time t
f
0.3 µs