2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
P-Channel JFETs
2N5460 SST5460
2N5461 SST5461
2N5462 SST5462
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Min (mA)
2N/SST5460 0.75 to 6 40 1 –1
2N/SST5461 1 to 7.5 40 1.5 –2
2N/SST5462 1.8 to 9 40 2 –4
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 High Input Impedance
C0068 Very Low Noise
C0068 High Gain: A
V
= 80 @ 20 C0109A
C0068 Low Capacitance: 1.2 pF Typical
C0068 Low Signal Loss/System Error
C0068 High System Sensitivity
C0068 High-Quality Low-Level Signal
Amplification
C0068 Low-Current, Low-Voltage Amplifiers
C0068 High-Side Switching
C0068 Ultrahigh Input Impedance
Pre-Amplifiers
C0068C0069C0083C0067C0082C0073C0080C0084C0073C0079C0078
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
Top View
S
G
D
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
Top View
2N5460
2N5461
2N5462
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083
Gate-Drain Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150C0095C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150C0095C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300C0095C. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/C0095C above 25C0095C