A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 200 mA 40 V
BV
CEX
I
C
= 200 mA V
BE
= -1.5 V 65 V
BV
CBO
I
C
= 500 µA 65 V
I
CEO
V
CE
= 30 V 250 µA
I
EBO
V
EB
= 4.0 V 250 µA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A 5.0 ---
C
ob
V
CB
= 30 V f = 1.0 MHz 20 pF
f
t
V
CE
= 28 V I
C
= 150 mA f = 100 MHz 400 MHz
P
out
G
P
η
C


V
CE
= 28 V f = 175 MHz
13.5
5.8
70

W
dB
%


NPN SILICON RF POWER TRANSISTOR
PT3642
DESCRIPTION:
The ASI PT3642 is Designed for
Class A,B,C Amplifier, Oscillator and
Driver Applications Covering 130 to
400MHz.

FEATURES INCLUDE:
• Emitter Ballasted
• Common Emitter Package
MAXIMUM RATINGS
I
C
3.0 A
V
CE
40 V
P
DISS
23 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
7.6 °C/W
PACKAGE STYLE TO- 60

1 = EMITTER 2 = BASE
3 = COLLECTOR CASE = EMITTER