Philips Semiconductors Product specification
Three quadrant triacs BTA208X-1000B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated high voltage, high commutation SYMBOL PARAMETER MAX. UNIT
triac in a full pack, plastic envelope. This
triac is intended for use in motor control
circuits where high blocking voltage, high V
DRM
Repetitive peak off-state 1000 V
static and dynamic dV/dt and high dI/dt can voltages
occur. This device will commutate the full I
T(RMS)
RMS on-state current 8 A
rated rms current at the maximum rated I
TSM
Non-repetitive peak on-state 65 A
junction temperature, without the aid of a current
snubber.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
Repetitive peak off-state - 1000 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 8 A
T
hs
≤ 73 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A
I
2
tI
2
t for fusing t = 10 ms - 21 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 12 A; I
G
= 0.2 A; 100 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G123
case
August 2003 1 Rev 1.000