©2003 Fairchild Semiconductor Corporation Rev. A, January 2003
BC6391
6
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
• PW=5ms, Duty Cycle=10%
Electrical Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CER
Collector-Emitter Voltage at R
BE
=1KΩ 100 V
V
CES
Collector-Emitter Voltage 100 V
V
CEO
Collector-Emitter Voltage 80 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 1 A
P
C
Collector Power Dissipation 1 W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 100 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 80 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5.0 V
I
CBO
Collector Cut-off Current V
CB
= 30V, I
E
= 0 100 nA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 10 µA
h
FE1
h
FE2
h
FE3
DC Current Gain V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
25
100
25
250
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 2V, I
C
= 500mA 1 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
=10mA,
f = 50MHz
100 MHz
BC63916
Switching and Amplifier Applications
1. Emitter 2. Collector 3. Base
TO-92
1