2SK1318
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：63.25KB，共10页
Sponsor by e络盟器件资料摘要：
2SK1318
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1269 (Z)
1st. Edition
Jan. 2001
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
1
2
3
TO-220FM
1. Gate
2. Drain
3. Source
D
G
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1269 (Z)
1st. Edition
Jan. 2001
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
1
2
3
TO-220FM
1. Gate
2. Drain
3. Source
D
G
S