BPW41N
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1 (5)
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(C0108
p
= 950 nm).
The large active area combined with a flat case gives a
high sensitivity at a wide viewing angle.
Features
C0068 Large radiant sensitive area (A=7.5 mm
2
)
C0068 Wide angle of half sensitivity ϕ = ± 65C0176
C0068 High radiant sensitivity
C0068 Fast response times
C0068 Small junction capacitance
C0068 Plastic case with IR filter (C0108=950 nm)
C0068 Suitable for near infrared radiation
94 8480
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
R
60 V
Power Dissipation T
amb
C0120 25 C0176C P
V
215 mW
Junction Temperature T
j
100 C0176C
Storage Temperature Range T
stg
–55...+100 C0176C
Soldering Temperature t C0120 5 s T
sd
260 C0176C
Thermal Resistance Junction/Ambient R
thJA
350 K/W