Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
• Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
• High Associated Gain:
18.5 dB Typical at 1.0 GHz
13.5 dB Typical at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
AT-41485
85 Plastic Package
Description
Agilent’s AT-41485 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41485 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigi-
tated geometry yields an interme-
diate sized transistor with imped-
ances that are easy to match for
low noise and moderate power
applications. Applications include
use in wireless systems as an LNA,
gain stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41485 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T

Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.