Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain
Current
B,G
T
C
=25°C
G
I
D
38
AT
C
=100°C
B
27
Pulsed Drain Current I
DM
60
Avalanche Current
C
I
AR
30 A
Repetitive avalanche energy L=0.1mH
C
E
AR
140 mJ
Power Dissipation
B
T
C
=25°C
P
D
60
W
T
C
=100°C 30
Junction and Storage Temperature Range T
J
, T
STG
-55 to 175 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
17.4 25 °C/W
Maximum Junction-to-Ambient
A
Steady-State
51 60 °C/W
Maximum Junction-to-Lead
C
Steady-State R
θJL
1.8 2.5 °C/W
AOD442, AOD442L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Dec 2004
Features
V
DS
(V) = 60V
I
D
= 38A
R
DS(ON)
< 20mΩ (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 4.5V)
General Description
The AOD442 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AOD442L ( Green Product ) is offered in
a lead-free package.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.