Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
48 62.5
74 110
R
θJL
35 40
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
AT
A
=70°C 5.8
Pulsed Drain Current
B
20
Continuous Drain
Current
A
T
A
=25°C
I
D
6.9
T
A
=70°C 1.44
W
Power Dissipation
T
A
=25°C
P
D
2
Steady-State
°C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
AO6402, AO6402L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 3:Nov 2004
Features
V
DS
(V) = 30V
I
D
= 6.9A
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 42mΩ (V
GS
= 4.5V)
General Description
The AO6402 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device may be used as a load switch or in PWM
applications. AO6402L ( Green Product ) is offered in
a lead-free package.
G
D
S
G
D
D
S
D
D
1
2
3
6
5
4
TSOP-6
Top View
Alpha & Omega Semiconductor, Ltd.