This Data Sheet states AMD’s current technical specificat
Sheet may be revised by subsequent versions or modificat
Am29F010B
1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
n Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
n Manufactured on 0.32 µm process technology
— Compatible with Am29F010 and Am29F010A
device
n High performance
— 45 ns maximum access time
n Low power consumption
— 12 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current
n Flexible sector architecture
— Eight 16 Kbyte sectors
— Any combination of sectors can be erased
— Supports full chip erase
n Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
n Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
n Erase Suspend/Resume
— Supports reading data from a sector not
being erased
n Minimum 1 million erase cycles guaranteed per
sector
n 20-year data retention at 125°C
— Reliable operation for the life of the system
n Package options
— 32-pin PLCC
— 32-pin TSOP
— 32-pin PDIP
n Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
n Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
ions regarding the Product described herein. This Data
ions due to changes in technical specifications.
Publication# 22336 Rev: C Amendment/0
Issue Date: November 28, 2000