AAT7157
20V P-Channel Power MOSFET
7157.2004.04.1.0 1
General Description
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTech™'s
TrenchDMOS™ product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in bat-
tery packs.
Applications
• Battery Packs
• Battery-powered portable equipment
Features
•V
DS(MAX)
= -20V
•I
D(MAX)
1
= -5.8A @ 25°C
• Low R
DS(ON)
:
• 36 mΩ @ V
GS
= -4.5V
• 62 mΩ @ V
GS
= -2.5V
Dual SOP-8L Package
D1 D1 D2 D2
S1 G1 S2 G2
Top View
1234
8765
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient steady state
1
100
R
θJA2
Maximum Junction-to-Ambient t<10 seconds
1
62.5 °C/W
R
θJF
Typical Junction-to-Foot
1
35
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±5.8
T
A
= 70°C ±4.6
A
I
DM
Pulsed Drain Current
2
±24
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.5
P
D
Maximum Power Dissipation
1
T
A
= 25°C 2.0
W
T
A
= 70°C 1.25
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C