JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors


8550SS TRANSISTOR（ PNP ）

FEATURES
Power dissipation
PCM : 1W （ Tamb=25℃）
Collector current
ICM: -1.5 A
Collector-base voltage
V(BR)CBO : - 40V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100 μ A ， IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 μ A， IC=0 -6 V
Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μ A
Collector cut-off current ICEO VCE= -20 V , IE=0 -0.1 μ A
Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 Μ A
hFE（ 1） VCE= -1V , IC=-100 mA 85 300
DC current gain
hFE（ 2） VCE=-1V , IC=-800 mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800 m,IB=-80 mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA,IB=-80 mA -1.2 V
Transition frequency fT
VCE=-10 V, IC=-50mA

f =30 MHz
100 MHz

CLASSIFICATION OF hFE(1)
Rank B C D
Range 85-160 120-200 160-300



1 2 3

TO— 92




1.EMITTER

2. COLLECTOR

3. BASE