DESCRIPTION:
The 672-1175M is a NPN bipolar transistor specifically designed
for high peak pulse power applications such as DME/TACAN.
This device is capable of withstanding a minimum 20:1 load
VSWR at any phase angle under full rated conditions. Internal
impedance matching provides consistent broadband
performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation 400 W
I
C
Device Current 12 A
V
CC
Collector-Supply Voltage* 55 V
TJ Junction Temperature 200 °C
T
STG
Storage Temperature -65 to +200 °C
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case 0.3 °C/W
Features
· 1025 – 1150 MHz
· 50 VOLTS
· INTERNAL INPUT/OUTPUT MATCHING
· P
OUT
= 175 WATTS
· G
P
= 7.7 dB MINIMUM
· COMMON BASE CONFIGURATION

Fax-on-Demand:
Tel-on-Demand:
86-22-24207687 / 25-471-1126
86-22-24207688 / 25-471-1136
Before ordering check with
factory for most current data

672-1175M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS