JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors


3CA8772 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
PCM : 1.25 W（ Tamb=25℃）
Collector current
ICM : -3 A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（ Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-100μ A ， IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 μ A， IC=0 -6 V
Collector cut-off current ICBO VCB= -40 V , IE=0 -10 μ A
Collector cut-off current ICEO VCE=-30 V , IB=0 -10 μ A
Emitter cut-off current IEBO VEB=-6V , IC=0 -10 μ A
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Transition frequency f T
VCE= -5V, IC=-0.1A
f = 10MHz 50 MHz

CLASSIFICATION OF hFE(1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400





1 2 3
TO— 126



1. EMITTER

2.COLLECTOR

3.BASE