Power Transistors www.jmnic.com
2SC3691
Silicon NPN Transistors




null Features B C E
﹒With TO-220Fa package
﹒High speed ,power switching applications

null Absolute Maximum Ratings Tc=25℃
SYMBOL PARAMETER RATING UNIT
V
CBO
Collector to base voltage 100 V
V
CEO
Collector to emitter voltage 60 V
V
EBO
Emitter to base voltage 5 V
I
C
Collector current 5 A
P
C
Collector power dissipation 25 W
T
j
Junction temperature 150 ℃
T
stg
Storage temperature -55~150 ℃
TO-220Fa
null Electrical Characteristics Tc=25℃
SYMBOL PARAMETER CONDITIONS MIN Typ. MAX UNIT
I
CBO
Collector cut-off current V
CB
=60V; I
E
=0 10 uA
I
EBO
Emitter cut-off current V
EB
=5V; I
C
=0 10 uA
I
CEO
Collector cut-off current
V
CBO
Collector-base breakdown voltage
V
CEO(SUS)
Collector-emitter Sustaining voltage I
C
=30mA; I
B
=0 60 V
V
EBO
Emitter-base breakdown voltage
V
CE(sat-1)
Collector-emitter saturation voltages I
C
=4A; I
B
=0.2A 0.5 V
V
CE(sat-2)
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio I
C
=1A; V
CE
=2V 100 400
h
FE-2
Forward current transfer ratio
V
BE(sat)1
Base-emitter saturation voltages I
C
=4A; I
B
=0.2A 1.5 V
V
BE(sat)2
Base-emitter saturation voltages
f
T
Transition frepuency I
C
=0.5A; V
CE
=10V 150 MHz
C
ob
Collector Out put Capacitance I
C
=0, V
CB
=10V f=1MHz 70 pF








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